Search results for "Microcrystalline silicon"

showing 2 items of 2 documents

Residual crystalline silicon phase in silicon-rich-oxide films subjected to high temperature annealing

2002

Structural properties of silicon rich oxide films (SRO) have been investigated by means of micro-Raman spectroscopy and transmission electron microscopy (TEM). The layers were deposited by plasma enhanced chemical vapor deposition using different SiH4/O2 gas mixtures. The Raman spectra of the as-deposited SRO films are dominated by a broad band in the region 400-500 cm-1 typical of a highly disordered silicon network. After annealing at temperatures above 1000°C in N2, the formation of silicon nanocrystals is observed both in the Raman spectra and in the TEM images. However, most of the precipitated silicon does not crystallize and assumes an amorphous microstructure. © 2002 The Electrochem…

Materials scienceSiliconNanocrystal RamanAnnealing (metallurgy)Analytical chemistrychemistry.chemical_elementMineralogySurfaces Coatings and FilmSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della Materiasymbols.namesakePlasma-enhanced chemical vapor depositionMaterials ChemistryElectrochemistryCrystalline siliconRAMAN-SPECTROSCOPY; MICROCRYSTALLINE SILICON; THIN-FILMS; SCATTERING; SPECTRA; SUPERLATTICES; NANOCRYSTALS; SIO2-FILMS; SIZERenewable Energy Sustainability and the EnvironmentNanocrystalline siliconSurfaces and InterfacesCondensed Matter PhysicsCrystallographic defectSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsAmorphous solidchemistrysymbolsRaman spectroscopy
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ESR observations of paramagnetic centers in intrinsic hydrogenated microcrystalline silicon

2002

Paramagnetic centers in hydrogenated microcrystalline silicon, mc-Si:H have been studied using dark and light-induced electron-spin resonance ~ESR!. In dark ESR measurements only one center is observed. The g values obtained empirically from powder-pattern line-shape simulations are gi52.0096 and g’52.0031. We suggest that this center may be due to defects in the crystalline phase. During illumination at low temperatures, an additional ESR signal appears. This signal is best described by two powder patterns indicating the presence of two centers. One center is asymmetric (gi51.999, g’51.996), while the other is characterized by large, unresolved broadening such that unique g values cannot b…

ParamagnetismMaterials scienceMicrocrystalline siliconPhase (matter)ResonanceGrain boundaryElectronAtomic physicsCiència dels materialsSignalRecombination
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